Au-gated SrTiO3 field-effect transistors with large electron concentration and current modulation
نویسندگان
چکیده
We report the fabrication of low-leakage rectifying Pt and Au Schottky diodes and Au-gated metal-semiconductor field effect transistors (MESFETs) on n-type SrTiO3 thin films grown by hybrid molecular beam epitaxy. In agreement with previous studies, we find that compared to Pt, Au provides a higher Schottky barrier height with SrTiO3. As a result of the large dielectric constant of SrTiO3 and the large Schottky barrier height of Au, the Au-gated MESFETs are able to modulate !1.6 " 10 cm#2 electron density, the highest modulation yet achieved using metal gates in any material system. These MESFETs modulate current densities up to !68 mA/mm, !20" times larger than the best demonstrated SrTiO3 MESFETs. We also discuss the roles of the interfacial layer, and the field-dependent dielectric constant of SrTiO3 in increasing the pinch off voltage of the MESFET. VC 2014 AIP Publishing LLC. [http://dx.doi.org/10.1063/1.4896275]
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